Konoreva, O.V.; Lytovchenko, M.V.; Malyi, Ye.V.; Olikh, Ya.M.; Petrenko, I.V.; Pinkovska, M.B.; Tartachnyk, V.P.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24·10¹⁴ e/cm²) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence ...