Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Dissipation effects in superconducting heterostructures with tungsten nanorods as weak links
Репозиторій DSpace/Manakin
JavaScript is disabled for your browser. Some features of this site may not work without it.
Dissipation effects in superconducting heterostructures with tungsten nanorods as weak links
Тема:
Сверхпроводимость и низкотемпературная микроэлектроника
Інший ID:
PACS: 85.25.Cp, 73.21.Hb, 74.40.Gh
Посилання:
Dissipation effects in superconducting heterostructures with tungsten nanorods as weak links / V.E. Shaternik, A.P. Shapovalov, O.Yu. Suvorov, E.S. Zhitlukhina, M.A. Belogolovskii, P. Febvre, A.A. Kordyuk // Физика низких температур. — 2018. — Т. 44, № 3. — С. 332-337. — Бібліогр.: 25 назв. — англ.
Підтримка:
The work was supported by the Ukrainian-French grant
from the MES of Ukraine (Project M/27-2017) and
French-Ukrainian Partenariat Hubert Curien (PHC)
DNIPRO No. 37984RL. E.Zh. and M.B. are thankful to the
support of the Fundamental Research Programme funded
by the MES of Ukraine (Project No. 0117U002360) and
the grant from the State Fund for Fundamental Research of Ukraine (Project F76/65-2017). A.K. is thankful to the
support of the Targeted Research & Development Initiatives Programme funded by the STCU and the National
Academy of Sciences of Ukraine (Project No. 6250)
Дата:
2018
Переглядів:
367
Завантажень:
302
Анотація:
Thin-film hybrid heterostructures formed by superconducting molybdenum-rhenium-alloy films with a critical temperature of about 9 K and nanoscale silicon-based semiconducting interlayers with metallic tungsten nanorods have been fabricated and studied. Current-voltage characteristics of the junctions were measured at 4.2 K and under influence of 11 GHz microwave irradiation. The evidence of a quasi-one-dimensional transport through the tungsten weak links disrupted by phase-slip centers was revealed in MoRe/doped Si/MoRe trilayers under irradiation by a high-frequency field. Also, measured current-voltage characteristics of five-layer MoRe/doped Si/MoRe/doped Si/MoRe devices exhibit a strong influence of a dissipation state in the MoRe interlayer. Namely, the switching from a superconducting state with low dissipation to a finite-conductance regime can be initiated by the emergence of an extra phase-slip center in the MoRe interlayer. Possible physical mechanisms of the two findings are discussed.
