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періодичних видань НАН України
Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis
Репозиторій DSpace/Manakin
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Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis
Тема:
Characterization and properties
Інший ID:
DOI: https://doi.org/10.15407/fm24.03.372
Посилання:
Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis / B.V. Kushnir, Z.D. Kovalyuk, V.M. Katerynchuk, V.V. Netyaga, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 3. — С. 372-375. — Бібліогр.: 16 назв. — англ.
Дата:
2017
Переглядів:
833
Завантажень:
472
Анотація:
A new heterojunction (GP) p-FeIn₂Se₄-n-In₄Se₃ was formed by the mechanical contact of the FeIn₂Se₄ plate with the van der Waals surface of In₄Se₃. Investigation of Volt-Farada's, spectral characteristics and temperature dependences of the VAC of the heterojunction. On the basis of the analysis of electric and photovoltaic characteristics of the GP, a high-quality zone diagram was constructed. The region of spectral photosensitivity of p-FeIn₂Se₄-n-In₄Se₃ GP which is in the range 0.7-1.3 eV, is established.
