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періодичних видань НАН України
On the nature of ionic liquid gating of Nd₂CuO₄ thin films
Репозиторій DSpace/Manakin
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On the nature of ionic liquid gating of Nd₂CuO₄ thin films
Тема:
К 100-летию со дня рождения И.М. Лифшица
Інший ID:
PACS: 66.10.–x, 68.15.+e, 82.45.–h
Посилання:
On the nature of ionic liquid gating of Nd₂CuO₄ thin films / Hasan Atesci, Francesco Coneri, Maarten Leeuwenhoek, Hans Hilgenkamp, Jan M. van Ruitenbeek // Физика низких температур. — 2017. — Т. 43, № 2. — С. 353-359. — Бібліогр.: 50 назв. — англ.
Підтримка:
This work is part of the research programme of the
Foundation for Fundamental Research on Matter (FOM,
12PR3047), which is financially supported by the Netherlands
Organization for Scientific Research (NWO). The
authors also gratefully acknowledge the technical support
from J. Aarts and S. Voltan.
Дата:
2017
Переглядів:
722
Завантажень:
231
Анотація:
Recently, ionic liquid gating has been used to modulate the charge carrier properties of metal oxides. The mechanism behind it, however, is still a matter of debate. In this paper, we report experiments on doped and undoped Nd₂CuO₄. We find major resistance drops of the bilayer coupled to observations of the presence of a considerable Faradeic component in the gate current and of the appearance of charge transfer peaks in the cyclic voltammetry data. This leads us to propose a mechanism of gating based on irreversible electrochemical reactions, likely due to trace amounts of contaminations present in the ionic liquid. This work is therefore in line with previous reports confirming the presence of irreversible electrochemistry in ionic liquid gated electron- doped cuprates.
