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періодичних видань НАН України
Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods
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Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods
Тема:
10th International Conference on Cryocrystals and Quantum Crystals (Final part)
Інший ID:
PACS: 44.10.+i, 63.20.kd, 68.60.Dv
Посилання:
Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods / O. Churiukova, A. Jeżowski, P. Stachowiak, J. Mucha, Z. Litwicki, P. Perlin and T. Suski // Физика низких температур. — 2015. — Т. 41, № 7. — С. 725-728. — Бібліогр.: 9 назв. — англ.
Підтримка:
The work was supported by Wroclaw Research Centre
EIT+ within the project “The Application of Nanotechnology
in Advanced Materials” — NanoMat (POIG.01.01.02-
02-002/08) co-financed by the European Regional Development
Fund (operational Programme Innovative Economy,
1.1.2).
Дата:
2015
Переглядів:
996
Завантажень:
469
Анотація:
The thermal conductivity of three single crystal samples of n-type gallium nitride with electron densities of
4.0⋅10¹⁶, 2.6⋅10¹⁸, and 1.1⋅10²⁰ cm⁻³ has been determined in the temperature range 4–320 K. The measurements
were carried out within the ab plane using the stationary method. The thermal conductivity depends strongly on
the donor concentration. The analysis within the Callaway approach and the Debye model shows a significant influence
of phonon–electron scattering on the thermal conductivity of the samples. In addition, some preliminary
results obtained along the c axes of GaN layered samples are presented. The latter measurements have been carried
out using the 3ω method.
