Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility
Репозиторій DSpace/Manakin
JavaScript is disabled for your browser. Some features of this site may not work without it.
Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility
Тема:
Электронные свойства низкоразмерных систем
Інший ID:
PACS: 73.40.–c, 73.43.–f
Посилання:
Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility / Yu.G Arapov, G.I. Harus, I.V. Karskanov, V.N. Neverov, N.G.Shelushinina, M.V. Yakunin // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 207-210. — Бібліогр.: 22 назв. — англ.
Підтримка:
The work was supported by: Russian Foundation
for Basic Research RFBR, grants 05-02-16206 and
04-02-16614; program of Russian Academy of Sciences
«Low-dimensional quantum heterostructures»; CRDF
and Ministry of Education and Science of Russian
Federation, grant Y1-P-05-14 (Ek-05 [X1]); Ural Division
of Russian Academy of Sciences, grant for
young scientists; Russian Science Support Foundation.
Дата:
2007
Переглядів:
696
Завантажень:
373
Анотація:
The apparent insulator—quantum Hall—insulator (I—QH—I) transition for filling factor 1
has been investigated in p-type Ge/Ge₁₋xSix heterostructures with εFτ/h ≈ 1. Scaling analysis is
carried out for both the low- and high-field transition point. In low magnetic fields ωcτ < 1 pronounced
QH-like peculiarities for ν = 1 are also observed in both the longitudinal and Hall
resistivities. Such behavior may be evidence of a localization effect in the mixing region of Landau
levels and is inherent for two-dimensional structures in a vicinity of the metal—insulator transition.
