Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8
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Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 4
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Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

Belyaev, A.E. ; Bobyl, A.V. ; Boltovets, N.S. ; Ivanov, V.N. ; Konakova, R.V. ; Konnikov, S.G. ; Kudryk, Ya.Ya. ; Markovskiy, E.P. ; Milenin, V.V. ; Rudenko, E.M. ; Tereschenko, G.F. ; Ulin, V.P. ; Ustinov, V.M. ; Tsirlin, G.E. ; Shpak, A.P.

Інший ID: PACS 68.55.Ac, 81.15.-z, 85.30.Kk

URI: http://dspace.nbuv.gov.ua/handle/123456789/121562

Посилання: Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis / A.E. Belyaev, A.V. Bobyl, N.S. Boltovets, V.N. Ivanov, R.V. Konakova, S.G. Konnikov, Ya.Ya. Kudryk, E.P. Markovskiy, V.V. Milenin, E.M. Rudenko, G.F. Tereschenko, V.P. Ulin, V.M. Ustinov, G.E. Tsirlin, A.P. Shpak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 65-71. — Бібліогр.: 7 назв. — англ.

Підтримка: This work was performed in the framework of the Russian-Ukrainian Program on Nanophysics and Nanoelectronics.

Дата: 2005

Завантажень: 305

Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

Анотація:

The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the 44−59 GHz (first harmonic) and 101−104 GHz (second harmonic) frequency ranges. For both harmonics, the power output of the Gunn diodes grown on porous substrates was shown to be from 20 to 30 % higher than those grown on the flat ones.

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