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Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2016, № 1
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Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity
Інший ID:
DOI: 10.15407/spqeo19.01.034
PACS 29.40.-n, 85.30.-z, 85.60.Dw
PACS 29.40.-n, 85.30.-z, 85.60.Dw
Посилання:
Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity / O.V. Konoreva, M.V. Lytovchenko, Ye.V. Malyi, Ya.M. Olikh, I.V. Petrenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 34-38. — Бібліогр.: 20 назв. — англ.
Дата:
2016
Переглядів:
918
Завантажень:
422
Анотація:
The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24·10¹⁴ e/cm²) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence intensity of samples previously loaded with US increased during long-term storage (t = 15 h). Passing the current through the diode generates the relaxation process of radiation brightness falling followed by the growth when ultrasound is switched on. The results of calculation of the dislocation density responsible for electroluminescence quenching within the region of electroluminescence degradation are adduced. It was found the ultrasound effect on diodes irradiated with high-energy electrons.
