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Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 3
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Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power
Інший ID:
DOI: 10.15407/spqeo18.03.286
PACS 61.05.cp, 61.80.-x, 77.55.hf, 81.15.Cd
PACS 61.05.cp, 61.80.-x, 77.55.hf, 81.15.Cd
Посилання:
Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power / D.V. Myroniuk, A.I. Ievtushenko, G.V. Lashkarev, V.T. Maslyuk, I.I. Timofeeva, V.A. Baturin, O.Yu. Karpenko, V.M. Kuznetsov, M.V. Dranchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 286-291. — Бібліогр.: 25 назв. — англ.
Дата:
2015
Переглядів:
823
Завантажень:
409
Анотація:
Transparent conductive oxide thin films of Al-doped ZnO grown by rf magnetron sputtering were irradiated with high energy electrons with the energy 12.6 MeV and fluence 5·10¹⁴ e/cm². The films were produced using different sputtering powers. It has been shown that electron irradiation creates defects that lead to distortions of the crystal lattice, which results in reduced crystallinity of the films. Also, it leads to film heating that results in radiation annealing and relaxation of the lattice.
