Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18
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Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 3
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Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix

Azhniuk, Yu.M. ; Gomonnai, A.V. ; Gomonnai, O.O. ; Hasynets, S.M. ; Kováč, F. ; Lopushansky, V.V. ; Petryshynets, I. ; Rubish, V.M. ; Zahn, D.R.T.

Інший ID: DOI: 10.15407/spqeo18.03.248
PACS 64.70.pn, 78.67.-n, 82.80.Gk

URI: http://dspace.nbuv.gov.ua/handle/123456789/121206

Посилання: Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix / Yu.M. Azhniuk, A.V. Gomonnai, O.O. Gomonnai, S.M. Hasynets, F. Kováč, V.V. Lopushansky, I. Petryshynets, V.M. Rubish, D.R.T. Zahn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 248-254. — Бібліогр.: 41 назв. — англ.

Підтримка: Yu.M. Azhniuk is grateful to Deutscher Akademischer Austauschdienst (DAAD) for the support of his research at Chemnitz University of Technology.

Дата: 2015

Завантажень: 346

Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix

Анотація:

Sn–As–P–S glasses were obtained using co-melting of pre-synthesized As₂S₃ and Sn₂P₂S₆. Their structure and composition were confirmed by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, and micro-Raman scattering. Crystallization of Sn₂P₂S₆ crystallites from the glass matrix is observed at annealing under relatively low temperatures (410…580 K).

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