Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon
Репозиторій DSpace/Manakin
- Домашня сторінка
- →
- Фізико-технічні та математичні науки
- →
- Відділення фізики і астрономії
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8
- →
- Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 3
- →
- Переглянути статтю
JavaScript is disabled for your browser. Some features of this site may not work without it.
Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon
Інший ID:
PACS: 62.20.Dc, 81.40.Jj
Посилання:
Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon / B.I. Gutsulyak, A.V. Oliynych-Lysyuk, I.M. Fodchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 25-29. — Бібліогр.: 19 назв. — англ.
Дата:
2005
Переглядів:
706
Завантажень:
303
Анотація:
Low-frequency internal friction and dynamic shear modulus (Geff) in Si monocrystal were investigated in the range of 20 to 200 ºC. Temperature hysteresis of internal friction was found and effective shear modulus was studied in the unirradiated and a series of irradiated silicon samples. The appearance of a hysteresis loop is due to interaction of genetic microdefects with crystal point defects and their nonsymmetric distribution in the process of samples heating-cooling.
