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Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 3
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Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method
Інший ID:
PACS 68.55.-a, 78.66.-w
Посилання:
Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method / T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 19-24. — Бібліогр.: 16 назв. — англ.
Підтримка:
The author would like to thank to Dr. A. N. Smyryeva
and M. G. Dusheyko (NTUU “KPI”, Kiev, Ukraine) for
sample preparation, to Prof. V.G. Litovchenko (Institute
of Semiconductor Physics, Kiev, Ukraine) for assistance
in interpretation of the IR spectra, M. Rommel (TU
Erlangen-Nurenberg, Germany) for AFM measurements,
Prof. D. Zahn and Dr. M. Friedrich (TU Chemnitz,
Germany) for their help in simulation of calculations
after ellipsometric measurements.
Дата:
2005
Переглядів:
687
Завантажень:
287
Анотація:
This paper presents the results of AFM, Raman, IR spectroscopy and ellipsometry of α-Si:Y films prepared by electron-beam evaporation. The influence of the type and temperature of substrates, as well as the evaporation rate on film morphology, composition and optical properties are studied. The evaporation rate increase allows to enhance the growth of films on p-Si up to 0.1 μm/min. The obtained α-Si:Y films possess an amorphous structure with a small amount of nanocrystalline inclusions. The formation of nanocrystalline inclusions could be generated by SiHх, peaks of which are clearly pronounced at 650, 890 and 2125 сm⁻¹ in the IR spectrum or yttrium impurities. The ellipsometry results show that α-Si:Y films have the high absorption coefficient, refraction index is 3.4 at the wavelength λ = 620 nm. The optical bandgap drops from 2.0 to 1.17 eV when the substrate temperature increases (140 to 300 °С).
