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Photoresponse of Schottky-barrier detector under strong IR laser excitation
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 1
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Photoresponse of Schottky-barrier detector under strong IR laser excitation
Інший ID:
PACS: 73.30.+ y, 73.40.Ns, 73.50.Cr, P
Посилання:
Photoresponse of Schottky-barrier detector under strong IR laser excitation / S. Asmontas, D. Seliuta, E. Sirmulis // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 138-143. — Бібліогр.: 18 назв. — англ.
Підтримка:
We would like to thank the EKSPLA Co., Ltd. in Vilnius for providing the optical parametrical generator PG401DFG and Er:YSGG laser used in this work. We are grateful for support and encouragement of Dr.P. Balkevicius and Dr. A. Michailovas and the kind technical assistance of A. Rinkevicius and E. Barbrauskas during the experiments. This work was partly supported by Lithuanian State and Education Fund within the framework of «Jutikliai» Programme.
Дата:
2000
Переглядів:
705
Завантажень:
437
Анотація:
Peculiarities of the photovoltaic effect in Ti/n-Si Schottky contact have been studied experimentally under infrared (IR) laser excitation at wavelengths 2.79, 3, 5, 7 and 10.6 mm. We demonstrate that strong laser excitation gives rise to the photovoltage even if an incident photon energy is lower than Schottky barrier height. In this case the photovoltage as a function of light intensity follows a power-law dependence with the power greater than unity (2...6). The results are interpreted from the viewpoint of electron emission over the potential barrier due to multiphoton or multistep light absorption at the metal-semiconductor interface.
