Наукова електронна бібліотека
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періодичних видань НАН України
Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals
Репозиторій DSpace/Manakin
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Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals
Тема:
Characterization and properties
Інший ID:
DOI: dx.doi.org/10.15407/fm21.02.152
Посилання:
Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals / P.O. Maksimchuk, V.V. Seminko, I.I. Bespalova, A.A. Masalov // Functional Materials. — 2014. — Т. 21, № 2. — С. 152-157. — Бібліогр.: 23 назв. — англ.
Дата:
2014
Переглядів:
697
Завантажень:
595
Анотація:
In the paper methods of thermoluminescence (TSL) and time-resolved spectroscopy were used for investigation of shallow electron traps near edge of 4f⁰ band in CeO₂ and nonstoichiometric CeO₂₋x nanocrystals. It was shown that presence of the electronic traps located about 0.2 eV lower than the bottom of 4f⁰ band leads to sufficient modification of O2p-Ce4f excitation relaxation processes due to excitation retrapping. Strong dependence of TSL signal on the stoichiometry of nanocrystal allows to suppose that electronic defects are associated with oxygen vacancies and are formed by F⁺ centers.
