Ultrasound effect on radiation damages in boron implanted silicon

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
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Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 1
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Ultrasound effect on radiation damages in boron implanted silicon

Romanjuk, B. ; Krüger, D. ; Melnik, V. ; Popov, V. ; Olikh, Ya. ; Soroka, V. ; Oberemok, O.

Інший ID: PACS 61.72T; 66.30L; 61.72

URI: http://dspace.nbuv.gov.ua/handle/123456789/120227

Посилання: Ultrasound effect on radiation damages in boron implanted silicon / B. Romanjuk, D. Krüger, V. Melnik, V. Popov, Ya. Olikh, V. Soroka, O. Oberemok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 15-18. — Бібліогр.: 9 назв. — англ.

Підтримка: We would like to thank Prof. V. Litovchenko and Prof. A. Ourmazd for helpful discussion.

Дата: 2000

Завантажень: 447

Ultrasound effect on radiation damages in boron implanted silicon

Анотація:

The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect formation. The defect concentration decreases both in the as-implanted and post-annealed samples, implanted with US-treatment. The physical model of this effect, connecting it with stimulated diffusion of silicon interstitials under the US treatment have been proposed.

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