Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
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Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 1
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Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon

Neimash, V.B. ; Puzenko, O.O. ; Kraitchinskii, A.M. ; Krasko, M.M. ; Putselyk, S. ; Claeys, C. ; Simoen, E.

Інший ID: PACS: 61.72.T, C, 66.30.L, 72.80.C, 73.61.C

URI: http://dspace.nbuv.gov.ua/handle/123456789/120226

Посилання: Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon / V.B. Neimash, O.O. Puzenko, A.M. Kraitchinskii, M.M. Kras'ko, S.Putselyk, C. Claeys, E. Simoen // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 11-14. — Бібліогр.: 17 назв. — англ.

Дата: 2000

Завантажень: 330

Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon

Анотація:

Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800⁰C. It is believed that this fact results from the dissolution of oxygen microfluctuations that are considered to be sources of intrinsic elastic strains and thereby to lie at the basis of locally accelerated oxygen diffusion.

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