Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 4
→
Переглянути статтю

Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons

Vasetskii, V.M. ; Poroshin, V.N. ; Ignatenko, V.A.

Інший ID: PACS: 42.65.Hw

URI: http://dspace.nbuv.gov.ua/handle/123456789/119317

Посилання: Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons / V.M. Vasetskii, V.N. Poroshin, V.A. Ignatenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 260-263. — Бібліогр.: 10 назв. — англ.

Підтримка: We would like to express our thanks to О. Sarbey and S. Оdoulov for helpful discussions and for critical reading of the manuscript.

Дата: 2001

Завантажень: 361

Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons

Анотація:

We have studied backward degenerate four-wave mixing at CO₂ laser wavelengths in n-type Ge. Phase conjugation due to redistribution of free electrons between equivalent valleys was observed. The effect is related to carrier heating by infrared radiation.

Показати повний запис статті