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Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 4
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Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact
Інший ID:
PACS: 73.30.+y, 73.40.Kp, 73.50.Pz
Посилання:
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact / L.V. Shekhovtsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 253-259. — Бібліогр.: 21 назв. — англ.
Підтримка:
The author would like to thank R.V. Konakova and V.G. Lyapin for valua le discussions.
Дата:
2001
Переглядів:
690
Завантажень:
324
Анотація:
We investigated transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for Ge-GaAs heterostructures and NbN-GaAs Schottky contacts is determined by interaction between photocurrents flowing in the bulk and near interfaces.
An additional unmodulated illumination of the samples during the measurements of the photovoltage spectral curves changes the interaction of photocurrents. This leads to modification of the photovoltage spectral curves. An analysis of their features enables one to put forward models for interaction of photocurrents flowing near the interfaces and obtain the characteristics of the interface uniformity in composite semiconductor structures.
