Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase
Репозиторій DSpace/Manakin
- Домашня сторінка
- →
- Фізико-технічні та математичні науки
- →
- Відділення фізики і астрономії
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11
- →
- Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 2
- →
- Переглянути статтю
JavaScript is disabled for your browser. Some features of this site may not work without it.
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase
Інший ID:
PACS 71.20.Nr, 71.55.-i, 81.15.Aa
Посилання:
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase / Ya.P. Saliy, І.М. Freik, V.V. Prokopiv (Jr) // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 167-170. — Бібліогр.: 6 назв. — англ.
Дата:
2008
Переглядів:
661
Завантажень:
551
Анотація:
The work has suggested an adequate model describing formation of defects in
films of AIVBVI compounds in vapor-phase growth. Being based on this model, it has
given an analytical description of dependences for film electrophysical parameters
(concentrations n, p and mobilities µn, µp of free charge carriers) on technological factors
of film growth. We have calculated concentrations of activated and inactivated defects as
subject to temperature of film deposition. The developed model enables determination of
entropy and enthalpy of defect formation processes.
