Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15
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Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 4
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Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density

Sachenko, A.V. ; Belyaev, A.E. ; Boltovets, N.S. ; Zhilyaev, Yu.V. ; Kapitanchuk, L.M. ; Klad’ko, V.P. ; Konakova, R.V. ; Kudryk, Ya.Ya. ; Kuchuk, A.V. ; Naumov, A.V. ; Panteleev, V.V. ; Sheremet, V.N.

Інший ID: PACS 73.40.Cg, 73.40.Ns, 85.40.-e

URI: http://dspace.nbuv.gov.ua/handle/123456789/118725

Посилання: Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, A.V. Naumov, V.V. Panteleev, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 351-357. — Бібліогр.: 19 назв. — англ.

Підтримка: This work was supported by the State Target Scientific and Technical Program of Ukraine “Nanotechnologies and nanomaterials” for 2010-2014.

Дата: 2012

Завантажень: 568

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density

Анотація:

We studied temperature dependences of the resistivity, Pc(T) , of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n - GaN and n - AlN with a high dislocation density. BothPc(T) curves have portions of exponential decrease, as well as those with very slight Pc(T) dependence at higher temperatures. Besides, the Au-Pd-TiPd-n-GaN contacts have a portion of Pc(T) flattening out in the low-temperature region. This portion appears only after rapid thermal annealing (RTA). In principle, its appearance may be caused by preliminary heavy doping of the near-contact region with a shallow donor impurity as well as doping in the course of contact formation owing to RTA, if the contact-forming layer involves a material atoms of which serve as shallow donors in III  N compounds. The obtained Pc(T) dependences cannot be explained by the existing mechanisms of current transfer. We propose other mechanisms explaining the experimental Pc(T) curves for ohmic contacts to n - GaN and n -AlN .

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