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Photoluminescence studies of CdTe polycrystalline films
Репозиторій DSpace/Manakin
- Домашня сторінка
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 4
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Photoluminescence studies of CdTe polycrystalline films
Інший ID:
PACS 78.55.E
Посилання:
Photoluminescence studies of CdTe polycrystalline films / V.V. Tetyorkin, A.V. Sukach, S.V. Stariy and V.A. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 40-44. — Бібліогр.: 28 назв. — англ.
Підтримка:
This work is a part of the research work M310. The
authors are grateful to our colleagues F. Sizov and G.
Shepelskii for helpful discussions and technical support.
Дата:
2012
Переглядів:
720
Завантажень:
353
Анотація:
Photoluminescence (PL) studies of CdTe polycrystalline films are reported.
The films were grown using the modified close space sublimation technique on sapphire
substrates. The mean grain size in the investigated films was ranged from 10 up to
360 μm. The distinct spectral bands around 1.580 and 1.440 eV were observed at 77 K.
These bands are attributed to shallow bound excitons at dislocations and deep defects,
respectively. The intensity of luminescence related to dislocation defects is found to be
proportional to the density of grain boundaries. The nature of grain boundaries in the
investigated films has been briefly discussed.
