Посилання:Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd₀.₅₂Sr₀.₄₈MnO₃ thin films / V.G. Prokhorov, G.G. Kaminsky, J.M. Kim, T.W. Eom, J.S. Park, Y.P. Lee, V.L. Svetchnikov, G.G. Levtchenko, Yu.M. Nikolaenko, V.A. Khokhlov // Физика низких температур. — 2011. — Т. 37, № 4. — С. 392–396. — Бібліогр.: 16 назв. — англ.
Підтримка:This work was supported by the NRF/MEST through the Quantum Photonic Science Research Center, Korea. V. Svetchnikov is grateful to the financial support of Netherlands Institute for Metal Research.
Nd₀.₅₂Sr₀.₄₈MnO₃ films with the different thickness have been prepared by dc magnetron sputtering on LaAlO₃ (001) single-crystalline substrates. A decrease of the film thickness leads to a significant suppression of the ferromagnetic (FM) ordering and the Curie point becomes below the antiferromagnetic (AFM) transition temperature. As this take place, a huge rise of the magnetoresistance ratio from 400 to 60 000% at an applied magnetic field of 5 T is observed. We consider that this new kind of the enhanced colossal magnetoresistance effect is originated from the FM/AFM competition and the collapse of the charge-ordered state at high magnetic field rather than through the regular double-exchange mechanism.