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A model for non-thermal action of microwave radiation on oxide film/semiconductor structures
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2014, том 17
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 3
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A model for non-thermal action of microwave radiation on oxide film/semiconductor structures
Інший ID:
PACS 78.70.Fy, 78.70.Gq
Посилання:
A model for non-thermal action of microwave radiation
on oxide film/semiconductor structures / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 227-231. — Бібліогр.: 26 назв. — англ.
Підтримка:
The author is indebted to Prof. A.M. Svetlichnyi for his
interest in this work and valuable discussions
Дата:
2014
Переглядів:
854
Завантажень:
530
Анотація:
A model is considered that explains mechanism of non-thermal action of
microwave radiation on the thin SiO₂ (ТiO₂, Er₂O₃, Gd₂O₃) film/SiC and SiO₂/GaAs
structures. It assumes that the centers of electron-hole recombination are redistributed
because of resonance interaction between dislocations of certain length and microwave
radiation. As a result, additional bands appear in photoluminescence (PL) spectra of the
oxide film/SiC structures or intensities of some bands are redistributed in the PL spectra of
the SiO₂/GaAs structure, as well as optical density of the oxide film/SiC structures changes.
