Metrological aspects of researching the specific contact resistivity of ohmic contacts by using the four-contact method

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2014, том 17
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Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 4
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Metrological aspects of researching the specific contact resistivity of ohmic contacts by using the four-contact method

Інший ID: PACS 73.40.Ns, 73.40.Cg, 85.40.-e

URI: http://dspace.nbuv.gov.ua/handle/123456789/118426

Посилання: Metrological aspects of researching the specific contact resistivity of ohmic contacts by using the four-contact method / V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 394-397. — Бібліогр.: 8 назв. — англ.

Дата: 2014

Завантажень: 485

Metrological aspects of researching the specific contact resistivity of ohmic contacts by using the four-contact method

Анотація:

In this paper, we have considered the four-contact method for measurements of the specific contact resistivity of the ohmic contacts (ρc). The presented method for measuring ρc has been compared with several other methods. Limits of applying this method have been shown.

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