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Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 1
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Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films
Інший ID:
PACS 07.10.Lw, 81.10.Bk, Dn, 77.84.Bw, 78.40, 78.55, 81.16.Pr
Посилання:
Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films / Yu.Yu. Bacherikov, N.S. Boltovets, R.V. Konakova, E.Yu. Kolyadina, T.M. Ledn'ova, O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 13-16. — Бібліогр.: 18 назв. — англ.
Дата:
2012
Переглядів:
632
Завантажень:
325
Анотація:
In this work, we studied comparative characteristics of the SiO₂/SiC
heterostructures. The following two techniques were used for SiO₂ formation: thermal
oxidation in water vapor (i) and oxidation in solution (ii). According to experimental
results obtained from optical absorption and photoluminescence spectra as well as from
measurements of internal mechanical stresses, one can conclude that the thin SiO₂ films
prepared using the technique (ii) possess SiO₂/SiC interface with a less number of
defective states than that for SiO₂ films prepared using the technique (i).
