Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15
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Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 1
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Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe

Kovalyuk, Z.D. ; Duplavyy, V.Y. ; Sydor, O.M.

Інший ID: PACS 73.40.Lq

URI: http://dspace.nbuv.gov.ua/handle/123456789/118249

Посилання: Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe / Z.D. Kovalyuk, V.Y. Duplavyy, O.M. Sydor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 38-40. — Бібліогр.: 5 назв. — англ.

Дата: 2012

Завантажень: 304

Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe

Анотація:

n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of the heterojunction were measured, and principal mechanisms of charge transfer were established. The spectrum of relative quantum efficiency of the heterojunction was measured.

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