Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15
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Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 1
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Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields

Інший ID: PACS 71.15.Nc, 71.35.-y, 73.21.Fg

URI: http://dspace.nbuv.gov.ua/handle/123456789/118239

Посилання: Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields / A. Taqi, J. Diouri // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 21-25. — Бібліогр.: 10 назв. — англ.

Дата: 2012

Завантажень: 471

Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields

Анотація:

Parameterized equations have been derived using variational calculation for energy levels of Wannier excitons in 2D-parabolic quantum wells in uniform electric and magnetic fields. The formulation has been performed in the framework of the effective mass approximation and two-band model. Illustrations have been given for GaAlAsGaAs-GaAlAs and CdMnTe-CdTe-CdMnTe parabolic quantum wells. The comparison with existing data displays good agreement.

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