Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 2
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Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry

Fodchuk, І.М. ; Dovganyuk, V.V. ; Litvinchuk, Т.V. ; Kladko, V.P. ; Slobodian, М.V. ; Gudymenko, O.Yo. ; Swiatek, Z.

Інший ID: PACS 61.10.Kw, Nz, 61.72.Dd, Ff, 68.55.Ln

URI: http://dspace.nbuv.gov.ua/handle/123456789/118237

Посилання: Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry/ І.М. Fodchuk, V.V. Dovganyuk, Т.V. Litvinchuk , V.P. Kladko, М.V. Slobodian, O.Yo. Gudymenko, Z. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 209-213. — Бібліогр.: 22 назв. — англ.

Дата: 2010

Завантажень: 345

Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry

Анотація:

Structural changes in silicon single crystals irradiated with high-energy electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve behaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocal space maps (HR-RSMs) were found as a function of the radiation dose. The generalized dynamic theory of X-ray Bragg-diffraction in crystals comprising defects of several types (spherical and disc-shaped clusters as well as dislocation loops) and a damaged nearsurface layer was used for explanation.

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