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Radiative recombination in initial and electron-irradiated GaP crystals
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1
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Radiative recombination in initial and electron-irradiated GaP crystals
Інший ID:
PACS 29.40.-n, 85.30.-z, 85.60.Dw
Посилання:
Radiative recombination in initial and electron-irradiated GaP crystals / O. Hontaruk, O. Konoreva, P. Litovchenko, V. Manzhara, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 30-35. — Бібліогр.: 24 назв. — англ.
Дата:
2010
Переглядів:
767
Завантажень:
292
Анотація:
Photoluminescence of GaP crystals irradiated by 1 MeV electrons was studied
at 4.2 K. Samples were prepared using various technologies and doped by Te, Zn, Mg
and N. Emission spectra were analyzed as dependent on the impurity content. Found was the electron irradiation influence on the luminescence intensity and its mechanism.
Radiative recombination intensity was shown to recover efficiently within the
temperature range 200-600 ºC, and the main annealing stage being at 200-400 ºC.
