The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1
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The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts

Belyaev, A.E. ; Boltovets, N.S. ; Kapitanchuk, L.M. ; Konakova, R.V. ; Kladko, V.P. ; Kudryk, Ya.Ya. ; Kuchuk, A.V. ; Lytvyn, O.S. ; Milenin, V.V. ; Korostinskaya, T.V. ; Ataubaeva, A.B. ; Nevolin, P.V.

Інший ID: PACS 85.30.De

URI: http://dspace.nbuv.gov.ua/handle/123456789/117698

Посилання: The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts /A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, R.V. Konakova, V.P. Kladko, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, T.V. Korostinskaya, A.B. Ataubaeva, P.V. Nevolin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 8-11. — Бібліогр.: 14 назв. — англ.

Підтримка: This work was supported by the Government Goaloriented Scientific and Technical Program “The development and acquisition of microelectronic technologies, organization of serial production of devices and systems with them” 2008-2011. Decree of the Cabinet of Ministers of Ukraine No 1335 from November 21, 2007.

Дата: 2010

Завантажень: 298

The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts

Анотація:

We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact resistivity increases with temperature; this is typical of metallic conductivity. We suggest that the ohmic contact is formed owing to appearance of shunts at Pd deposition on dislocations or other structural defects. The number of shunts per unit area is close to the measured density of structural defects at the metal-Si interface.

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