Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Impurity and vacancy effects in graphene
Репозиторій DSpace/Manakin
JavaScript is disabled for your browser. Some features of this site may not work without it.
Impurity and vacancy effects in graphene
Тема:
Low Temperature Spectroscopy and Radiation Effects
Інший ID:
PACS: 03.65.Pm, 71.30.+h, 71.55.–i
Посилання:
Impurity and vacancy effects in graphene / V.M. Loktev, Yu.G. Pogorelov // Физика низких температур. — 2012. — Т. 38, № 8. — С. 993-1000. — Бібліогр.: 33 назв. — англ.
Підтримка:
Y.P. thanks V.A. Miransky, J.P. Carbotte and S.G. Sharapov
for very useful discussions of disorder effects in graphene,
and kind hospitality by the Department of Applied
Mathematics of University of Western Ontario during his
sabbatical stay there, when this work was initiated. The support
from Portuguese Fundação para a Ciência e a Tecnologia
is gratefully acknowledged. V.L. thanks the SCOPES
grant and also the Special Program of fundamental researches
by Physics and Astronomy Department of NAS of
Ukraine for the partial support.
Дата:
2012
Переглядів:
899
Завантажень:
607
Анотація:
A Green function analysis has been developed for quasiparticle spectrum of a 2D graphene sheet in presence
of different types of substitutional disorder, including vacancies. The anomalous character of impurity effects in
this system is demonstrated, compared to those in well known doped semiconductors, and explained in terms of
conical singularities in the band spectrum of pure graphene. The criteria for appearance of localized states on
clusters of impurity scatterers and for qualitative restructuring of band spectrum are established and a possibility
for a specific metal/insulator transition at presence of vacancies is indicated.
