Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE
Репозиторій DSpace/Manakin
JavaScript is disabled for your browser. Some features of this site may not work without it.
The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE
Тема:
Квантовые эффекты в полупpоводниках и диэлектриках
Інший ID:
PACS: 72.20.My, 72.20.Fr, 72.80.Ey
Посилання:
The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE / A. Yildiz, M. Kasap // Физика низких температур. — 2010. — Т. 36, № 4. — С. 407-412. — Бібліогр.: 25 назв. — англ.
Підтримка:
We would like to thank Dr. Mateo Bosi for providing the InGaN sample. This work is supported by the State of Planning Organization of Turkey under Grant No. 2001K120590.
Дата:
2010
Переглядів:
582
Завантажень:
496
Анотація:
Low temperature electrical measurements of the resistivity, the Hall effect and the magnetoconductivity were performed on an InGaN sample having an electron concentration far above the critical value for the metalinsulator transition. Weak localization effect and two-band model were used to analyze the magnetoconductivity data. The temperature dependence of the inelastic scattering time was extracted from the magnetoconductivity data at low temperatures. It was found that the inelastic scattering time is proportional to T⁻¹.⁶³, suggesting that electron–electron interactions are dominant.
