Посилання:Resonant tunneling of electrons in quantum wires / I.V. Krive, A. Palevski, R.I. Shekhter, and M. Jonson // Физика низких температур. — 2010. — Т. 36, № 2. — С. 155-180. — Бібліогр.: 149 назв. — англ.
Підтримка:This work was supported in parts by the Swedish VR
and SSF, by the Faculty of Science at the University of Gothenburg through the «Nanoparticle» Research Platform,
and by the Korean WCU programme funded by MEST
through KOSEF (R31-2008-000-10057-0). IVK gratefully
acknowledges financial support from a joint grant from the
Ministries of Education and Science in Israel and Ukraine
and from the grant «Effects of electronic, magnetic and
elastic properties in strongly inhomogeneous nanostructures» provided by the National Academy of Sciences of
Ukraine. IVK thanks the Department of Physics at the University of Gothenburg and the School of Physics and Astronomy at Tel Aviv University for hospitality.
We considered resonant electron tunneling in various nanostructures including single wall carbon nanotubes, molecular transistors and quantum wires formed in two-dimensional electron gas. The review starts with a textbook description of resonant tunneling of noninteracting electrons through a double-barrier structure. The effects of electron–electron interaction in sequential and resonant electron tunneling are studied by using Luttinger liquid model of electron transport in quantum wires. The experimental aspects of the problem (fabrication of quantum wires and transport measurements) are also considered. The influence of vibrational and electromechanical effects on resonant electron tunneling in molecular transistors is discussed.