Перегляд за автором "Parasyuk, O.V."

Сортувати за: Порядок: Результатів:

  • Krymus, A.S.; Myronchuk, G.L.; Parasyuk, O.V.; Kityk, I.V.; Piasecki, M. (Functional Materials, 2017)
    In present article we present results of detailed study of the possibility adapting AgGaGe3Se8 single crystal properties to desired requirements by investigate the influence of the different cationic substitution on the ...
  • Nechyporuk, B.D.; Olekseyuk, I.D.; Yukhymchuk, V.O.; Filonenko, V.V.; Mazurets, I.I.; Parasyuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The glassy alloys of the GeS₂–HgS system in the range of 0–50 mol. % HgS were obtained by the melt quenching technique. Their Raman spectra were investigated. The dependence of the particularities of the light scattering ...
  • Halyan, V.V.; Davydyuk, H.Ye.; Parasyuk, O.V.; Kevshyn, A.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The glass HgS(x)-GeS2(₁₀₀-x) (0 ≤ x ≤ 50) was subjected to X-ray analysis. The radial distribution functions were calculated using the integral Fourier transformation based on X-ray scattering curves. The average interatomic ...
  • Bozhko, V.V.; Halyan, V.V.; Parasyuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Results of investigations of spectral characteristics in the fundamental absorption range for the glass-like alloys HgSe - GeSe₂ are represented. To explain the phenomenon of anomaly growth of the static disorder, the model ...