Перегляд за автором "Kudryavtsev, O.O."

Сортувати за: Порядок: Результатів:

  • Michailovska, K.V.; Indutnyi, I.Z.; Kudryavtsev, O.O.; Sopinskyy, M.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Investigated in this paper have been polarization properties of photoluminescence in solid and porous nc-Si−SiOx light emitting structures passivated in HF vapor. These structures were produced by thermal vacuum evaporation ...
  • Kudryavtsev, O.O.; Lisitsa, M.P.; Motsnyi, F.V.; Virko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Excitonic resonances near the critical saddle point of M₁ sort by van Hove have been revealed for the first time in the BiI₃ layered semiconductor. Their main parameters are estimated.
  • Pugantseva, O.V.; Kramar, V.M.; Fesiv, I.V.; Kudryavtsev, O.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Adduced in this work are the results of theoretical investigations devoted to the influence of spatial confinement effects, self-polarization of heterojunction planes and exciton-phonon interaction on values of the exciton ...