Перегляд за автором "Ibrahim, K."

Результати 1-2 з 2

Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate

Aw, K.C.; Ibrahim, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

The organic methylsilsesquioxane (MSQ) demonstrates low dielectric constant value (2.6) and is promising interlayer dielectric material to reduce the capacitive coupling between metal layers in semiconductor integrated ...
Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure

Aw, K.C.; Ibrahim, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)

Spin-on Methylsilsesquioxane (MSQ) exhibits low dielectric constant and is an important and promising material to reduce parasitic capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ ...

Результати 1-2 з 2

Пошук