Перегляд за автором "Zharkov, I.P."

Результати 1-3 з 3

Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals

Zhirko, Yu.I.; Zharkov, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)

We show that processes of creation, radiation and decay of the ground (n = 1) and excited exciton states in layered n-InSe and p-GaSe crystals involve direct (photon -> exciton -> photon, at k = 0), as well as indirect ...
Light absorption by excited exciton states in layered InSe crystals

Zhirko, Yu.I.; Zharkov, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

We investigated spectra of light absorption by excitons in InSe crystals of different thicknesses, both pure and doped with iron group impurities, at temperatures from 4.5 up to 100 К. It was shown that, along with the ...
On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals

Zhirko, Yu.I.; Zharkov, I.P.; Kovalyuk, Z.D.; Pyrlja, M.M.; Boledzyuk, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)

Exciton absorption spectra of layered InSe and GaSe crystals electrochemically intercalated by hydrogen were investigated. It was found that the observed at T = 80 K non-monotonic shift of the exciton absorption peak n = ...

Результати 1-3 з 3

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