Перегляд за автором "Yuriychuk, I.M."

Сортувати за: Порядок: Результатів:

  • Compensation of hole conductivity in CdTe crystals doped with Cr 
    Nikonyuk, E.S.; Zakharuk, Z.I.; Kuchma, M.I.; Kovalets, M.O.; Rarenko, A.I.; Yuriychuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We present the results of optical and electrophysical investigations of CdTe:Cr crystals. A model explaining a considerable shift of the fundamental absorbtion edge in the crystals into the long-wave region is proposed. ...
  • Microhardness of Cd₁-ₓMnₓTe solid solutions 
    Dremlyuzhenko, S.G.; Zakharuk, Z.I.; Rybak, E.V.; Yuriychuk, I.M.; Gorbunov, V.V. (Functional Materials, 2006)
    The distribution coefficient of Mn (kₛ) in Cd₁-ₓMnₓТе (0.02 ≤ х ≤ 0.55) solid solutions crystals grown by Bridgman technique has been determined using the radioisotope method. Microhardness of Cd₁-ₓMnₓТе solid solutions ...
  • Self-purification effect in CdTe:Gd crystals 
    Nikonyuk, E.S.; Shlyakhovyi, V.L.; Kovalets, M.O.; Kuchma, M.I.; Zakharuk, Z.I.; Savchuk, A.I.; Yuriychuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The temperature dependences (T = 80 – 420 K) of the concentration of charge carriers and the Hall mobility in undoped CdTe and CdTe:Gd single crystals grown by the Bridgman method are studied. It is found that the ...