Перегляд за автором "Varnina, V.I."

Сортувати за: Порядок: Результатів:

  • Groza, A.A.; Venger, E.F.; Varnina, V.I.; Holiney, R.Yu.; Litovchenko, P.G.; Matveeva, L.A.; Litovchenko, A.P.; Sugakov, V.I.; Shmatko, G.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Processes of structure defects formation, which accompanied by oxygen precipitation after a neutron irradiation (10¹⁵- 10¹⁹ n/cm²) and high-temperature treatment (800 - 1000°С) in CZ silicon, were investigated by the ...
  • Starchyk, M.I.; Marchenko, L.S.; Pinkovska, M.B.; Shmatko, G.G.; Varnina, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Structural and optical properties of single crystal silicon irradiated with 27.2 MeV helium ions by using fluences Ф ≥ 10¹⁶ ion/cm² were studied at various beam currents. It was found that at currents 0.25 to 0.45 μА, ...