Ievtukh, V.A.; Ulyanov, V.V.; Nazarov, A.N.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide ...