Nazarov, A.N.; Skorupa, W.; Vovk, Ja.N.; Osiyuk, I.N.; Tkachenko, A.S.; Tyagulskii, I.P.; Lysenko, V.S.; Gebel, T.; Rebohle, L.; Yankov, R.A.; Nazarova, T.M.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under ...