Перегляд за автором "Sydor, O.M."

Сортувати за: Порядок: Результатів:

  • Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact 
    Kovalyuk, Z.D.; Sydor, O.M.; Netyaga, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is ...
  • Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe 
    Kovalyuk, Z.D.; Duplavyy, V.Y.; Sydor, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of ...