Azarenkov, N.A.; Semenenko, V.E.; Stervoyedov, N.G.
(Вопросы атомной науки и техники, 2022)
The nature of the change in the Fermi level of silicon under the influence of dopants, point defects, and dislocations has been determined. The parameters of the diffusion of impurities, the conditions for their appearance ...