Перегляд за автором "Sirmulis, E."

Сортувати за: Порядок: Результатів:

  • Photoresponse of Schottky-barrier detector under strong IR laser excitation 
    Asmontas, S.; Seliuta, D.; Sirmulis, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Peculiarities of the photovoltaic effect in Ti/n-Si Schottky contact have been studied experimentally under infrared (IR) laser excitation at wavelengths 2.79, 3, 5, 7 and 10.6 mm. We demonstrate that strong laser excitation ...
  • The influence of Cr concentration on time resolution of GaAs detectors 
    Fedorenko, L.L.; Linnik, L.F.; Linnik, L.G.; Yusupov, M.M.; Solovyov, E.A.; Sirmulis, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Investigated in this work were the influence of Cr dopant concentration and technological conditions of doping on photoconductivity (PhC) kinetics, dependence of PhC signal magnitude on voltage applied as well as the dynamic ...