Перегляд за автором "Sidelnikova, N.S."

Результати 1-15 з 15

Charge state of the activator in Ti:sapphire crystals grown by HDC method

Sidelnikova, N.S.; Nizhankovskyi, S.V.; Baranov, V.V. (Functional Materials, 2015)

The results of the study of the charge state of the activator ([Ti³⁺], [Ti⁴⁺]) in Ti:sapphire crystals grown by the method of horizontal directed crystallization, are presented. It is shown that, depending on the pressure, ...
Formation of the spinel structure (AIAI₂О₄) phase on sapphire surface

Sidelnikova, N.S.; Rom, M.A.; Dan‘ko, A.Ya.; Nizhankovsky, S.V.; Sirik, U.V.; Krivonogov, S.I. (Functional Materials, 2004)

A phenomenon of transformation of sapphire surface layer with the formation of a new cubic phase of spinel (AIAI₂О₄) structure as a result of high temperature reducing annealing has been revealed. The result of microscopic ...
Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere

Dan`ko, A.Ya.; Nizhankovsky, S.V.; Kanischev, V.N.; Sidelnikova, N.S.; Adonkin, G.T.; Puzikov, V.M.; Grin, L.A. (Functional Materials, 2006)

The gas environment process formation in the furnace for sapphire growth by horizontal directional crystalliztion equipped by a graphite heating assembly has been studied during the evacuation and the inert gas (Ar, He) ...
Growth and optical properties of Al₂O₃-delta:Nₓcrystals

Kaltaev, Kh.Sh.-ogly; Sidelnikova, N.S.; Nizhankovsky, S.V.; Dan`ko, A.Ya.; Budnikov, A.T. (Functional Materials, 2010)
Growth conditions influence on thermally stimulated luminescence of sapphire single crystals

Blonskyy, I.V.; Vakhnin, A.Yu.; Danko, A.Ya.; Kadashchuk, A.K.; Kadan, V.N.; Sidelnikova, N.S.; Puzikov, V.M.; Skryshevskii, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

The results of investigation of thermally stimulated and photoluminescence as well as absorption spectra of a-sapphire grown by a technique of horizontally directed crystallization in a protective gas medium of varying ...
Influence of crystal growth conditions and carbothermal treatment on activator charge state in Ti:sapphire

Nizhankovskiy, S.V.; Sidelnikova, N.S.; Baranov, V.V. (Functional Materials, 2018)

Presented are the results of comparative studies of the influence of carbothermal treatment of the raw material (Al₂O₃ and TiO₂ powders) and reducing properties of the growth medium on the charge state of titanium ions in ...
Mechanism of AlN film formation at thermochemical nitridization of sapphire

Kaltaev, Kh.Sh.-ogly; Nizhankovskiy, S.V.; Sidelnikova, N.S.; Rom, M.A.; Dan'ko, A.Ya.; Dobrotvorskaya, M.V.; Belyaev, A.Ye.; Strelchuk, V.V.; Kolomys, A.F. (Functional Materials, 2011)
Optical properties and fine faulty structure of sapphire crystals grown in low pressure CO gas atmosphere

Puzikov, V.M.; Danko, A.Ya.; Adonkin, G.T.; Sidelnikova, N.S.; Tkachenko, V.F.; Budnikov, A.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)

Presented in this paper are the results of the study of optical characteristics and fine faulty structure of big sapphire crystals grown in a CO-based low pressure (0.1...0.3 torr) gas atmosphere. Optimal conditions for ...
Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization

Grin, L.A.; Budnikov, A.T.; Sidelnikova, N.S.; Adonkin, G.T.; Baranov, V.V. (Functional Materials, 2013)

The coefficient of dislocation gliding over the planes of easy glide depending on the shape of the crystallization front, is determined. The regions of non-uniform distribution of thermal field in the crystal are established. ...
Peculiarities of optical and structure characteristics of sapphire single crystals grown in Ar + CO atmosphere

Dan’ko, A.Ya.; Tkachenko, V.F.; Sidelnikova, N.S.; Puzikov, V.M.; Nizhankovskiy, S.V. (Functional Materials, 2004)

Presented are the results of optical and X-ray structure investigations of sapphire crystals grown by the method of HOC in the protective (reducing) medium Ar+CO under a pressure of 10...800 torr. The dependence of the ...
Peculiarities of optical and structure characteristics of sapphire single crystals grown in Ar+CO atmosphere

Dan‘ko, A.Ya.; Tkachenko, V.F.; Sidelnikova, N.S.; Puzikov, V.M.; Nizhankovskiy, S.V. (Functional Materials, 2004)

Presented are the results of optical and X-ray structure investigations of sapphire crystals grown by the method of HOC in the protective (reducing) medium Ar+CO under a pressure of 10...800 torr. The dependence of the ...
Phase transformations at reduction of corundum

Dan`ko, A.Ya.; Rom, M.A.; Sidelnikova, N.S.; Kaltaev, Kh.Sh.; Nizhankovsky, S.V.; Fedorov, A.I. (Functional Materials, 2007)

Research results are presented on the corundum structure transformation caused by reducing annealing. The annealing at 1500-2000°C in Ar atmosphere at CO + H₂ concentration 0.1-10 vol.% and N₂ 0.1-0.4 vol.% has been found ...
Phase transformations of alpha-Al₂O₃ during annealing in a reducing atmosphere

Dan`ko, A.Ya.; Rom, M.A.; Sidelnikova, N.S.; Nizhankovsky, S.V.; Grin`, L.A. (Functional Materials, 2005)

Study results of corundum structure transformations due to annealing of a-AI₂О₃ in Ar atmosphere containing a reducing component (СО + Н₂) at 1700-1900 ℃ are presented. It has been found that a polycrystalline layer ...
Study of nature of some defects visible in polarized light in sapphire signle crystals

Tkachenko, V.F.; Dan`ko, A.Ya.; Puzikov, V.M.; Budnikov, A.T.; Lukienko, O.A.; Sidelnikova, N.S.; Adonkin, G.T. (Functional Materials, 2007)

Using the precision technique of triple-crystal X-ray diffractometry, the structure of defect parts has been studied in large-size sapphire crystals grown by the horizontal directed crystallization in reducing gas media. ...
Thermochemical etching of sapphire in CO+H₂ gas atmosphere

Kaltaev, Kh.Sh.-ogly; Sidelnikova, N.S.; Dan`ko, A.Ya.; Budnikov, A.T.; Nizhankovsky, S.V. (Functional Materials, 2010)

Результати 1-15 з 15

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Перегляд за автором "Sidelnikova, N.S."

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