Перегляд за автором "Shvets, V.A."

Сортувати за: Порядок: Результатів:

  • HgCdTe quantum wells grown by molecular beam epitaxy 
    Dvoretsky, S.A; Ikusov, D.G.; Kvon, Z.D.; Mikhailov, N.N.; Remesnik, V.G.; Smirnov, R.N.; Sidorov, Yu.G.; Shvets, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    CdxHg₁₋xTe-based (x = 0 – 0.25) quantum wells (QWs) of 8 – 22 nm in thickness were grown on (013) CdTe/ZnTe/GaAs substrates by molecular beam epitaxy. The composition and thickness (d) of wide-gap layers (spacers) were ...
  • Project “IREN”. Current status 
    Kobets, V.V.; Sumbaev, A.P.; Furman, V.I.; Shvets, V.A. (Вопросы атомной науки и техники, 2006)
    The pulsed source of Intense REsonance Neutrons (IREN), similar to the source-booster LUE-40–IBR-30 that operated at JINR till 2001, traditionally represents a combination of a driver − a linear electron accelerator ...
  • The full-scale microwave-stand of LUE-200 accelerator at IREN facility 
    Zamrij, V.N.; Kobets, V.V.; Sumbaev, A.P.; Furman, V.I.; Shvets, V.A. (Вопросы атомной науки и техники, 2001)