Перегляд за автором "Shelest, T.N."

Результати 1-3 з 3

The influence of point defects on the temperature dependence of quasi-two-dimensional 2H-NbSe₂ resistivity

Mamalui, A.A.; Shelest, T.N.; Fatyanova, N.B.; Sirenko, V.A. (Functional Materials, 2005)

The processes of point defects forming in quasi-two-dimensional 2H-NbSe₂ crystals were studied experimentally by measuring the temperature-time resistivity dependencies in the temperature range 300-500 K. It is found out ...
Thermodynamically equilibrium point defects in the low-dimensional systems

Mamalui, A.A.; Shelest, T.N.; Chashka, H.B. (Condensed Matter Physics, 1999)

The temperature dependencies of the electrical resistance of low-dimensional NbSe₃- and NbSe₂-single crystals were investigated in the range of 300–540 K. Measurements of resistance were produced along the chains for ...
Thin films CdS/CdTe solar cells with different activation processes base layer

Khrypunov, G.S.; Shelest, T.N.; Li, T.N.; Meriuts, A.V.; Kovtun, N.A.; Makarov, A.V.; Avksentyeva, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)

Shown in this work is the possibility to create industrial technology for production of solar cells FTO/CdS/CdTe. The technology includes annealing in freon processing step for activation of cadmium telluride base layers ...

Результати 1-3 з 3

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