Перегляд за автором "Sheinkman, M.K."

Сортувати за: Порядок: Результатів:

  • About the nature of diffusion anisotropy in CdS crystals 
    Borkovskaya, L.V.; Dzhumaev, B.R.; Khomenkova, L.Yu.; Korsunskaya, N.E.; Markevich, I.V.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction ...
  • Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures 
    Borkovska, L.V.; Korsunska, N.O.; Kushnirenko, V.I.; Sadofyev, Yu.G.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A spatial distribution of the cation vacancy related defects and their influence on the formation processes of self-assembled nanoislands in CdSe/ZnSe heterostructures were investigated by photoluminescence methods. ...
  • Properties of the shallow D-centers in semiconductors with polar and covalent binding 
    Kashirina, N.I.; Lakhno, V.D.; Sychyov, V.V.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The theoretical consideration of the energy of the lowest singlet and triplet terms of shallow D¯-centers (two electrons, bound with one-charge Coulomb center) in semiconductors with an ionic and covalent binding has been ...
  • The nature of red emission in porous silicon 
    Khomenkova, L.Yu.; Korsunska, N.E.; Bulakh, B.M.; Sheinkman, M.K.; Stara, T.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The photoluminescence spectra of porous silicon at 77 and 300 K and their transformation during aging were investigated. The competition of two radiative recombination channels that have a common excitation mechanism was ...
  • Theoretical approach to electrodiffusion of shallow donors in semiconductors: I. Stationary limit 
    Kashirina, N.I.; Kislyuk, V.V.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    Analysis is made for the possibility of redistribution of mobile point defects in a semiconductor after its exposure to the electric field till the stationary conditions in the crystal are reached. Two different ways of ...