Перегляд за автором "Shaykevich, I.A."

Результати 1-8 з 8

Angular dependences of ellipsometric parameters of thin Cr and Ti films under surface polariton excitation

Shybiko, Ya.A.; Shaykevich, I.A.; Melnichenko, L.Yu. (Functional Materials, 2006)

The 80 Å and 100 Å thick Cr films and 45 Å thick Ti ones were obtained bу the vacuum evaporation on glass substrates. The ellipsometric parameter ψ (azimuth of the restored linear polarization ψ) was measured at λ = 546.1 ...
Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters

Donets, V.V.; Melnichenko, L.Y.; Shaykevich, I.A.; Lomakina, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Offered in this work is the method to determine the thickness and refractive index dispersion of thin antireflection films on absorbing substrates by using a spectral dependence of reflectivity at normal light incidence. ...
Ellipsometric investigation of β-Si₃N₄ ceramics with Mo and Al additives

Prokopets', V.M.; Shaykevich, I.A.; Robur, L.Y. (Functional Materials, 2005)

Ceramic Si₃N₄ samples with Мо and AI admixtures have been investigated by spectroellipsometry. The influence of admixtures on the ceramics optical properties have been studied. The local defects of Si₃N₄ crystal structure ...
Influence of surface dimensional effects and interband transitions on absorption of light in aluminium

Mеlnichenko, L.Yu.; Tytarchuk, B.B.; Shaykevich, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Optical conductivity of aluminium with of large roughness surface were measured by a spectroellipsometric method in visible, near infrared and near ultra-violet region of the spectrum. Aluminium foil was used as a sample. ...
Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique

Rozouvan, T.S.; Poperenko, L.V.; Shaykevich, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)

Si crystal surface after chemical etching was studied using ellipsometry, atomic force microscopy and scanning tunneling microscopy. The ellipsometric parameters as functions of light incidence angles at two light wavelengths ...
Optical properties, form of granules and electronic parameters of binary Al/Cr composites

Shaykevich, I.A.; Kolesnyk, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)

Optical and structural properties of ultrathin binary Al/Cr composites were investigated in this paper. We ascertained that the samples did not have a long-range order, and their optical properties are defined by resonance ...
Optical properties of graphene film growing on a thin copper layer

Rozouvan, T.S.; Poperenko, L.V.; Kravets, V.G.; Shaykevich, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

Optical properties and surface structure of graphene films grown on thin 1-μm copper layer using the chemical vapor deposition method were investigated applying spectroscopic ellipsometry and nanoscopic measurements. ...
Optical properties of thin films of titanium with transient layers on them

Lendel, V.V.; Lomakina, O.V.; Mel’nychenko, L.Yu.; Shaykevich, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)

Within the Beattie spectroellipsometric method, we measured the ellipsometric parameters of thin Ті films deposited onto glass substrates by magnetron sputtering in argon atmosphere. Measurements were carried out at five ...

Результати 1-8 з 8

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Перегляд за автором "Shaykevich, I.A."

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