Rudenko, T.; Nazarov, A.; Kilchytska, V.; Flandre, D.; Popov, V.; Ilnitsky, M.; Lysenko, V.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
The charge coupling between the gate and substrate is a fundamental property
of any fully-depleted silicon-on-insulator (SOI) MOS transistor, which manifests itself as
a dependence of electrical characteristics at one ...